Precharge circuit and semiconductor memory apparatus using the same

摘要

A precharge circuit may include a precharge control unit, a first precharge unit, and a second precharge unit. The precharge control unit may generate a read precharge signal and a write precharge signal in response to a read signal, a write signal, and a precharge signal. The first precharge unit may precharge a data input/output line to a first voltage level in response to the read precharge signal. The second precharge unit may precharge the data input/output line to either a second voltage level or a third voltage level in response to the write precharge signal.

主权项

1. A precharge circuit comprising:
a precharge control unit configured to generate a read precharge signal and a write precharge signal in response to a read signal, a write signal, and a precharge signal; a first precharge unit configured to precharge a data input/output line to a first voltage level in response to the read precharge signal; and a second precharge unit configured to precharge the data input/output line to either a second voltage level or a third voltage level in response to the write precharge signal, wherein the second voltage level is lower than the third voltage level, and the third voltage level is lower than the first voltage level, wherein the second voltage level corresponds to a half of the first voltage level.