| 主权项 |
1. A method for depositing a film on a substrate, comprising:
introducing a precursor gas into a reaction volume of a processing chamber, wherein a substrate is arranged in the reaction volume, and wherein the precursor gas is introduced to the reaction volume through first gas distribution holes of a first plenum of a dual plenum showerhead arranged above the substrate, wherein the first gas distribution holes and the first plenum are defined by an upper faceplate and a lower faceplate, wherein a gas distribution channel around a perimeter of the first plenum is formed in a gap between the upper faceplate and the lower faceplate, wherein the gap is defined by a first sidewall of the upper faceplate and a second sidewall of the lower faceplate such that the gap is formed between the first sidewall and the second sidewall, wherein the precursor gas is introduced into the gas distribution channel via gas feed inlets at the perimeter of the first plenum and flows from the gas distribution channel through the first gas distribution holes and into the reaction volume; after a predetermined soak period, purging the precursor gas from the reaction volume; and exposing the substrate with plasma gas using a remote plasma source, wherein the plasma gas is provided to the reaction volume through a second plenum of the dual plenum showerhead and through second gas distribution holes that pass through the first plenum, wherein the precursor gas is not provided through either of the second gas distribution holes or the second plenum, and wherein the plasma gas is not provided through the first gas distribution holes of the first plenum. |
