发明名称 CMOS-MEMS integrated flow for making a pressure sensitive transducer
摘要 A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.
申请公布号 US9254997(B2) 申请公布日期 2016.02.09
申请号 US201314013080 申请日期 2013.08.29
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Cheng Chun-Wen;Liang Kai-Chih;Chu Chia-Hua
分类号 H01L29/66;B81C1/00 主分类号 H01L29/66
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A sensor, comprising: a first substrate including a conductive layer vertically arranged between a semiconductor layer and a conductive contact structure, wherein the conductive layer includes stationary regions and a movable region extending laterally between the stationary regions, wherein the movable region includes a plurality of recesses extending downwardly into an upper side of the conductive layer, wherein some of the plurality of recesses taper inwardly to adjoin openings extending through perforated regions in a lower side of the conductive layer and other of the plurality of recesses terminate at an upper surface of a conductive membrane of the conductive layer that is laterally arranged between the perforated regions, wherein the conductive contact structure protrudes outwardly from a lower side of the conductive layer, beyond a face of the first substrate, and wherein the conductive contact structure is electrically coupled to a pressure-sensitive micro-electrical-mechanical (MEMS) structure on the first substrate; a second substrate including a receiving structure having a conductive surface which is recessed from a face of the second substrate by sidewalls that bound the conductive surface, wherein the conductive surface is electrically coupled to a complementary metal oxide semiconductor (CMOS) device on the second substrate; and a conductive bonding material to physically adhere the conductive contact structure to the conductive surface and to electrically couple the MEMS structure to the CMOS device.
地址 Hsin-Chu TW