Non-volatile semiconductor memory adapted to store a multi-valued data in a single memory cell

摘要

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

主权项

1. A non-volatile semiconductor memory device comprising:
a non-volatile memory cell; and a write circuit, configured to write data in the memory cell, for supplying a write voltage and a write control voltage, thereby causing an alteration in a write state of the memory cell, for changing the supply of the write control voltage in order to slow down the alteration, and for terminating the alteration amid slowing down the alteration, wherein the write circuit does not change a supply state of the write control voltage when the write voltage is being continuously supplied to the memory cell.