发明名称 Semiconductor integrated circuit and method for operating the same
摘要 A switching loss is reduced by reducing a deviation from the operational principle of zero-volt switching (ZVS). A semiconductor integrated circuit includes high-side switch elements Q11 and Q12, a low-side switch element Q2, and a controller CNT. A decoupling capacitance Cin is coupled between one end of a high-side element and an earth potential, and the high-side element includes the first and second transistors Q11 and Q12 coupled in parallel. In changing the high-side elements from an on-state to an off-state, CNT controls Q12 from an on-state to an off-state by delaying Q12 relative to Q11. Q11 and Q12 are divided into a plurality of parts inside a semiconductor chip Chip 1, a plurality of partial first transistors formed by dividing Q11 and a plurality of partial second transistors formed by dividing Q12 are alternately arranged in an arrangement direction of Q11 and Q12, inside the semiconductor chip Chip 1.
申请公布号 US9257907(B2) 申请公布日期 2016.02.09
申请号 US201314064522 申请日期 2013.10.28
申请人 Renesas Electronics Corporation 发明人 Nomiyama Takahiro;Tateno Koji;Kondo Daisuke
分类号 H02M3/158;H03K17/12;H03K17/16;H02M1/00 主分类号 H02M3/158
代理机构 Mattingly & Malur, PC 代理人 Mattingly & Malur, PC
主权项 1. A semiconductor integrated circuit comprising a high-side switch element, a low-side switch element, and a controller, wherein an input voltage can be supplied to one end of the high-side switch element via a decoupling inductor, other end of the high-side switch element and one end of the low-side switch element are coupled to a switching node, and other end of the low-side switch element can be coupled to an earth potential, wherein the controller can drive the high-side switch element in an on-state and an off-state, wherein the switching node can be coupled to a low pass filter including a smoothing inductor and a smoothing capacitor, wherein a decoupling capacitor can be coupled between the one end of the high-side switch element and the earth potential, wherein the high-side switch element includes a first transistor and a second transistor whose current paths are coupled in parallel between the one end of the high-side switch element and the other end of the high-side switch element, wherein in changing a state between the one end of the high-side switch element and the other end of the high-side switch element from an on-state to an off-state, the controller controls the second transistor from the on-state to the off-state by delaying the second transistor relative to the first transistor, wherein each transistor of the first transistor and the second transistor is formed to be divided into a plurality of parts, inside a semiconductor chip, and wherein a plurality of partial first transistors formed by dividing the first transistor and a plurality of partial second transistors formed by dividing the second transistor are alternately arranged in an arrangement direction of the first transistor and the second transistor, inside the semiconductor chip.
地址 Tokyo JP
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