发明名称 |
Semiconductor integrated circuit and method for operating the same |
摘要 |
A switching loss is reduced by reducing a deviation from the operational principle of zero-volt switching (ZVS). A semiconductor integrated circuit includes high-side switch elements Q11 and Q12, a low-side switch element Q2, and a controller CNT. A decoupling capacitance Cin is coupled between one end of a high-side element and an earth potential, and the high-side element includes the first and second transistors Q11 and Q12 coupled in parallel. In changing the high-side elements from an on-state to an off-state, CNT controls Q12 from an on-state to an off-state by delaying Q12 relative to Q11. Q11 and Q12 are divided into a plurality of parts inside a semiconductor chip Chip 1, a plurality of partial first transistors formed by dividing Q11 and a plurality of partial second transistors formed by dividing Q12 are alternately arranged in an arrangement direction of Q11 and Q12, inside the semiconductor chip Chip 1. |
申请公布号 |
US9257907(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201314064522 |
申请日期 |
2013.10.28 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Nomiyama Takahiro;Tateno Koji;Kondo Daisuke |
分类号 |
H02M3/158;H03K17/12;H03K17/16;H02M1/00 |
主分类号 |
H02M3/158 |
代理机构 |
Mattingly & Malur, PC |
代理人 |
Mattingly & Malur, PC |
主权项 |
1. A semiconductor integrated circuit comprising a high-side switch element, a low-side switch element, and a controller,
wherein an input voltage can be supplied to one end of the high-side switch element via a decoupling inductor, other end of the high-side switch element and one end of the low-side switch element are coupled to a switching node, and other end of the low-side switch element can be coupled to an earth potential, wherein the controller can drive the high-side switch element in an on-state and an off-state, wherein the switching node can be coupled to a low pass filter including a smoothing inductor and a smoothing capacitor, wherein a decoupling capacitor can be coupled between the one end of the high-side switch element and the earth potential, wherein the high-side switch element includes a first transistor and a second transistor whose current paths are coupled in parallel between the one end of the high-side switch element and the other end of the high-side switch element, wherein in changing a state between the one end of the high-side switch element and the other end of the high-side switch element from an on-state to an off-state, the controller controls the second transistor from the on-state to the off-state by delaying the second transistor relative to the first transistor, wherein each transistor of the first transistor and the second transistor is formed to be divided into a plurality of parts, inside a semiconductor chip, and wherein a plurality of partial first transistors formed by dividing the first transistor and a plurality of partial second transistors formed by dividing the second transistor are alternately arranged in an arrangement direction of the first transistor and the second transistor, inside the semiconductor chip. |
地址 |
Tokyo JP |