发明名称 VERTICAL-TYPE HALL SENSOR AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a vertical-type hall sensor capable of minimizing a vertical current component by improving a structure thereof, and a manufacturing method therefor.SOLUTION: A vertical-type hall sensor according to the present invention comprises: a first conductive-type substrate; an input end including a first conductive-type input contact region formed in an inner region of the substrate and electrically connected to an input power source; a first ground end and a second ground end, each including a trench formed along one direction on each of both sides of the input end as a reference while being separated at a constant interval therefrom, an insulation film formed on the side surface of the trench, and a first conductive-type ground contact region formed at a bottom region of the trench and electrically connected to a ground power source; and a first sensing end and a second sensing end, each including a first conductive-type sensing contact region which is formed in a region of the substrate among a region between the input end and the first ground end and a region between the input end and the second ground end, for detecting a generated hall voltage.SELECTED DRAWING: Figure 1
申请公布号 JP2016025348(A) 申请公布日期 2016.02.08
申请号 JP20150128240 申请日期 2015.06.26
申请人 MAGNACHIP SEMICONDUCTOR LTD 发明人 FRANCOIS HEBERT
分类号 H01L43/06;G01R33/07 主分类号 H01L43/06
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