发明名称 POLISHER, POLISHER SET AND SUBSTRATE POLISHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polisher, a polisher set and a polishing method which can reduce the polishing rate of stopper material used in a substrate surface flattening step of a semiconductor element manufacturing process.SOLUTION: A polisher comprises water, an abrasive grain comprising hydroxide of a tetravalent metal element, and a nonionic compound with a structure represented by formula (I). In the CMP technique of flattening SIT insulation material, premetal insulation material, interlayer insulation material and others, a polishing rate in polishing insulation material with a stopper is reduced. In the formula, m and n are an integer of 1 or more and (AO) is alkylene oxide.SELECTED DRAWING: None
申请公布号 JP2016023224(A) 申请公布日期 2016.02.08
申请号 JP20140147759 申请日期 2014.07.18
申请人 HITACHI CHEMICAL CO LTD 发明人 YAMASHITA TETSURO;IWANO TOMOHIRO;YAMAMURA NAO;MINAMI HISATAKA;AKUTSU TOSHIAKI;KOIZUMI MASAKO
分类号 C09K3/14;B24B37/00;H01L21/304 主分类号 C09K3/14
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