| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor light-emitting element in which absorption of light from a semiconductor laminate by a pad electrode is reduced, with good productivity.SOLUTION: After forming a translucent electrode 14, having openings 14a intermittently in the extension direction of an extension 15b of a p-side electrode 15 that is a pad electrode, on an insulating film 16 formed on a semiconductor laminate 12, a light reflection film 17p is formed to extend on the openings 14a and the opposite ends of the translucent electrode 14 in the extension direction, while furthermore, a protective film 18 is formed on the principal surface side of a growth substrate 11. Thereafter, a mask is formed on the upper surface of the protective film 18 excepting the region where the p-side electrode 15 is formed, so as to cover the opposite ends of a light reflection film 17p in a direction perpendicular to the extension direction, and an opening is formed by removing the protective film 18 exposed from the mask by wet etching. Finally, the p-side electrode 15 is formed in the opening of the protective film 18.SELECTED DRAWING: Figure 2 |
