| 摘要 |
PROBLEM TO BE SOLVED: To provide: a Group III nitride semiconductor light-emitting device which is low in drive voltage; and a method for manufacturing such a light-emitting device.SOLUTION: A method for manufacturing a Group III nitride semiconductor light-emitting device comprises a p-type semiconductor layer-forming process. The p-type semiconductor layer-forming process includes: a p-type clad layer-forming step for supplying a first material gas including at least a Group III element and a dopant gas, thereby forming a p-side superlattice layer 170 on a light-emitting layer 160; a p-type intermediate layer-forming step for supplying the first material gas and the dopant gas, thereby forming a p-type intermediate layer 180 on the p-side superlattice layer 170; a dopant gas-supplying step for supplying the dopant gas while stopping the supply of the first material gas after the p-type intermediate layer-forming step; and a p-type contact layer-forming step for supplying the first material gas and the dopant gas, thereby forming a p-type contact layer 190 on the p-type intermediate layer 180 after the dopant gas-supplying step.SELECTED DRAWING: Figure 3 |
