发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To cancel the impact of noise propagating via a parasitic capacitance, when there is a differential input circuit, constituted as an integrated circuit, on a SOI substrate.SOLUTION: In a constitution where there are an operational amplifier 9 outputting a signal depending on a pair of differential inputs, and a noise source 6 for varying the potential of a support substrate by operation, on a SOI substrate 1, one end of a capacitor C1 having a parasitic capacitance CS1a for a support substrate 2 is connected to the side of a non-inverting input terminal, out of the pair of differential inputs, that is less susceptible to potential variation by a noise source 6.SELECTED DRAWING: Figure 1
申请公布号 JP2016025371(A) 申请公布日期 2016.02.08
申请号 JP20140145928 申请日期 2014.07.16
申请人 DENSO CORP 发明人 ISHIBE ISAO;OKUDA KATSUICHI;KAWAMOTO TEPPEI
分类号 H03F3/45;H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L29/732 主分类号 H03F3/45
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