| 摘要 |
PROBLEM TO BE SOLVED: To form a dense ferroelectric film with high orientation at low cost while suppressing the reduction in throughput in mass production.SOLUTION: A film formation method comprises: forming an orientation-control film 18 on a substrate by a coating step for forming a precursor solution coating film by coating with a precursor solution with solid contents dispersed therein for forming a crystal film, a heating step for heating the precursor solution coating film, and a crystallization step for heating at a temperature higher than a heating temperature in the heating step, thereby forming the crystal film; and then, forming a ferroelectric film 25 on the orientation-control film by a coating step, a heating step and a crystallization step. The particle diameter of the solid content at the maximum peak of a particle diameter distribution of the solid contents dispersed in the precursor solution used in forming the orientation-control film is larger than that of the precursor solution used in forming the ferroelectric film.SELECTED DRAWING: Figure 6 |
