| 摘要 |
905,553. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Feb. 4, 1959 [Feb. 4, 1958], No. 4002/59. Class 37. Gold, or an alloy of gold, is alloyed to a monocrystalline silicon body to produce a PN junction, and boron is employed so that it penetrates the liquid alloy of silicon and gold. In Fig. 1 amorphous boron powder 5 is sprinkled or brushed on to a gold foil 4 on a silicon disc 2 which is disposed on a gold-antimony foil 3. The assembly is then heated during the application of mechanical pressure, in an inert atmosphere or while embedded in a graphite, magnesium oxide or other neutral powder, to form a PN junction in the silicon body. Heating is preferably to between 400‹ and 500‹ C., and a boron compound such as boric acid may be used in place of elemental boron. |
