| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared detecting device capable of controlling a detection wavelength by a sign of an applied electric field or the like, without lowering an S/N ratio.SOLUTION: In an infrared detecting device, a first quantum dot layer, and a second quantum dot layer adjacent to the first quantum dot layer via a barrier layer are included in a light absorption layer, and n-type impurities are doped into a quantum dot in one of quantum dot layers of the first and second quantum dot layers.SELECTED DRAWING: Figure 1 |
