| 摘要 |
PROBLEM TO BE SOLVED: To suppress a leakage current in a substrate longitudinal direction at a desired operation temperature that exceeds room temperature, in a transistor using a III-V group compound semiconductor.SOLUTION: A semiconductor device includes: a buffer layer 102 formed on a substrate 101 and comprising a III-V group compound semiconductor; a channel layer 103 formed on the buffer layer 102 and comprising a III-V group compound semiconductor; and a barrier layer 104 formed on the channel layer 103 and comprising a III-V group compound semiconductor. In the buffer layer 102, a product of a carrier density and mobility at a desired operation temperature that exceeds room temperature is a lower value than a product of a carrier density and mobility at room temperature.SELECTED DRAWING: Figure 1 |
