PROTECTIVE FILM FOR POWER SEMICONDUCTOR ELEMENT, AND METHOD FOR FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a protective film for a power device which is high in all of voltage resistance, volume resistivity in a high temperature and high humidity state, and chemical resistance, maintains these performances over a long period, and is excellent in reliability and durability.SOLUTION: A protective film for a power semiconductor element is obtained by curing a polybenzoxazole precursor having a repeating unit expressed by the formula (1). In formula (1), nand nare each independently integers of 0-2; Xis a divalent organic group; Yis a (2+n+n)-valent organic group; and Rare each independently H or C1-10 hydrocarbon groups.SELECTED DRAWING: None