发明名称 POLISHER, POLISHER SET AND SUBSTRATE POLISHING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polisher which can polish silicon nitride at a high polishing rate and can also sufficiently reduce the polishing rate of silicon oxide.SOLUTION: A polisher comprises a liquid medium, an abrasive grain comprising hydroxide of a tetravalent metal element, a nonionic compound, and dicyandiamide-formaldehyde polycondensate.SELECTED DRAWING: None
申请公布号 JP2016023210(A) 申请公布日期 2016.02.08
申请号 JP20140147054 申请日期 2014.07.17
申请人 HITACHI CHEMICAL CO LTD 发明人 IWANO TOMOHIRO;YAMAMURA NAO;MINAMI HISATAKA;AKUTSU TOSHIAKI;YAMASHITA TETSURO;KOIZUMI MASAKO
分类号 C09K3/14;B24B37/00;H01L21/304 主分类号 C09K3/14
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