发明名称 |
POLISHER, POLISHER SET AND SUBSTRATE POLISHING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a polisher which can polish silicon nitride at a high polishing rate and can also sufficiently reduce the polishing rate of silicon oxide.SOLUTION: A polisher comprises a liquid medium, an abrasive grain comprising hydroxide of a tetravalent metal element, a nonionic compound, and dicyandiamide-formaldehyde polycondensate.SELECTED DRAWING: None |
申请公布号 |
JP2016023210(A) |
申请公布日期 |
2016.02.08 |
申请号 |
JP20140147054 |
申请日期 |
2014.07.17 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
IWANO TOMOHIRO;YAMAMURA NAO;MINAMI HISATAKA;AKUTSU TOSHIAKI;YAMASHITA TETSURO;KOIZUMI MASAKO |
分类号 |
C09K3/14;B24B37/00;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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