| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which is capable of making a flow rate of Ngas larger while suppressing cooling of a valve device 1 in alternately supplying TiClgas and NHgas for plural times to a substrate and depositing a film, and can contribute to improvement of throughput.SOLUTION: In alternately supplying TiClgas and NHgas for plural times to a wafer W and depositing a film, Ngas for atmosphere replacement supplied into a processing container 10 is heated in advance between supply of one process gas and supply of the other process gas. Therefore, a flow rate of Ngas can be made larger while suppressing cooling of an inner wall of the processing container 10 or a gas contact portion of the wafer W or the like, so that time required for atmosphere replacement can be shortened, which can contribute to improvement of throughput, and occurrence of a problem, such as adhesion of a reaction product caused by cooling of a valve device 1, is suppressed.SELECTED DRAWING: Figure 1 |
