| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic field sensor having a field-effect transistor structure arranged by use of a semiconductor thin film, of which the sensitivity can be controlled appropriately.SOLUTION: A magnetic field sensor 1 comprises: a semiconductor thin film 2; a drain electrode 3; a source electrode 4; a gate electrode 5; a first hole electrode 6; and a second hole electrode 7. In the magnetic field sensor, a drain-source current is caused to flow through a channel region 20 of the semiconductor thin film 2 between the drain electrode 3 and the source electrode 4 according to a drain voltage applied to the drain electrode 3, and a gate voltage Vgs applied to the gate electrode; and a hole voltage can be generated between a first hole electrode 6 and a second hole electrode 7 according to the drain-source current, and a magnetic field which is present in the channel region 20. In the magnetic field sensor, a voltage in a low-voltage range Rbelow a permissible minimum gate voltage value Vis not applied to the gate electrode 5 because of such a voltage being not allowed to be used; and a gate voltage Vgs equal to or larger than the permissible minimum gate voltage value Vis applied to the gate electrode 5.SELECTED DRAWING: Figure 1 |
