RESISTIVE MEMORY DEVICE AND METHODS OF OPERATING THE MEMORY DEVICE

摘要

The present invention relates to a method for operating a memory device, which includes a plurality of memory cells respectively arranged in regions where a plurality of first signal lines and a plurality of second signal lines cross each other. The method comprises the following steps of: determining a plurality of pulses so that each of the plurality of pulses, which are sequentially applied to a selected memory cell among the plurality of memory cells, is changed according to a number of times of executing program loops; and determining at least one of first and second inhibit voltages so that a voltage level of at least one of the first and second inhibit voltages, which are respectively applied to unselected first and second signal lines connected to unselected memory cells among the plurality of memory cells, is changed according to the number of times of executing the program loops in response to the change of the plurality of pulses.