SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided. The semiconductor device includes a plurality of word lines which are separated from each other in a first direction perpendicular to the upper surface of a substrate, on the substrate; a channel hole which is defined to penetrate the word lines to be extended to the upper surface of the substrate; a gate insulating layer which is formed on an inner wall of the channel hole, and has a gate insulating layer interposed between the word lines; and a self-aligned contact which is formed in the upper part of the channel layer, in the channel hole.