| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a mask blank having a phase shift film having high resistance to an exposure light of ArF excimer laser and having reduced film stress.SOLUTION: A method has a phase shift film forming process for forming a phase shift film by forming a high transmission layer and a low transmission layer having relatively lower nitrogen content than the high transmission layer by reactive sputtering in a sputtering gas containing nitrogen-based gas, xenon and helium gas by using a silicon target or a target consisting of a material containing silicon and one or more elements selected from semi-metallic element and non-metallic element, and a heat treatment process for conducting a heat treatment at a temperature of 180°C or more.SELECTED DRAWING: Figure 1 |
