| 发明名称 |
METHOD OF MANUFACTURING TRANSITION METAL CHALCOGENIDE THIN FILM |
| 摘要 |
Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film. |
| 申请公布号 |
US2016035568(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514812856 |
申请日期 |
2015.07.29 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHUNG Yong-Duck;CHO DAEHYUNG;LEE Woo Jung;HAN Won Seok |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a transition metal chalcogenide thin film, the method comprising:
providing a substrate having a transition metal film thereon; and providing a chalcogen material having a first molecular structure on the transition metal film, wherein the providing the chalcogen material having the first molecular structure comprises:
evaporating a chalcogen source to form a chalcogen material having a second molecular structure; anddecomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure,wherein the first molecular structure comprises relatively less atoms than the second molecular structure. |
| 地址 |
Daejeon KR |
