| 发明名称 |
MEMORY DEVICE AND METHOD OF OPERATING THE MEMORY DEVICE |
| 摘要 |
A memory device and a method of operating the memory device are provided for performing a read-retry operation. The method of operating the memory device includes starting a read-retry mode, reading data of multiple cell regions using different read conditions, and setting a final read condition for the cell regions according to results of data determination operations on data read from the cell regions. |
| 申请公布号 |
US2016035417(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514698175 |
申请日期 |
2015.04.28 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK HYUN-KOOK;OH YOUNG-HOON;BYEON DAE-SEOK;LEE YONG-KYU;KWON HYO-JIN |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An method of operating a memory device, the method comprising:
starting a read-retry mode; reading data of a plurality of cell regions using different read conditions; and setting a final read condition for the cell regions, according to results of data determination operations on data read from the cell regions. |
| 地址 |
Suwon-si KR |
