NON-VOLATILE STATIC RANDOM ACCESS MEMORY CIRCUITS

摘要

A non-volatile static random access memory (nvSRAM) circuit is provided. The nvSRAM circuit includes first and second switches and a latch circuit. The first switch has a first terminal coupled to a first bit line. The second switch has a first terminal coupled to a second bit line. The latch circuit is coupled to second terminals of the first and second switches. The latch circuit has a first non-volatile memory element. When the nvSRAM circuit is at a writing mode, first input data on the first bit line is written into in the latch circuit, and the first non-volatile memory element has a first state corresponding to the first data. When the nvSRAM circuit is at a reading mode, first readout data is generated according to the first state of the first non-volatile memory element is generated and provided to the first bit line.

主权项

1. A non-volatile static random access memory (nvSRAM) circuit comprising:
a first switch having a first terminal coupled to a first bit line and further having a second terminal; a second switch having a first terminal coupled to a second hit line and further having a second terminal; a latch circuit, coupled to the second terminal of the first switch and the second terminal of the second switch, having a first non-volatile memory element, wherein when the non-volatile static random access memory circuit is at a writing mode, first input data on the first bit line is written into in the latch circuit, and the first non-volatile memory element has a first state corresponding to the first data, and wherein when the non-volatile static random access memory is at a reading mode, first readout data is generated according to the first state of the first non-volatile memory element is generated and provided to the first bit line.