| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME |
| 摘要 |
A semiconductor memory device includes a memory cell array including a plurality of cell cores which include a first cell core corresponding to a first channel that is a normal channel and a second cell core corresponding to a second channel that is a failed channel; and an access circuit configured to perform address remapping by converting a first address of at least a first failed cell in the first cell core into a second address of at least a second cell in the second cell core, and to transmit data of at least the second cell through the first channel. |
| 申请公布号 |
US2016034371(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514730632 |
申请日期 |
2015.06.04 |
| 申请人 |
OH Gi-Won;JUNG Ju-Yun;KIM Soo-Hyeong;KIM Hyun-Joong |
发明人 |
OH Gi-Won;JUNG Ju-Yun;KIM Soo-Hyeong;KIM Hyun-Joong |
| 分类号 |
G06F11/20;G06F3/06 |
主分类号 |
G06F11/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a memory cell array comprising a plurality of cell cores which comprise a first cell core corresponding to a first channel that is a normal channel and a second cell core corresponding to a second channel that is a failed channel; and an access circuit configured to perform address remapping by converting a first address of at least a first failed cell in the first cell core into a second address of at least a second cell in the second cell core, and to transmit data of at least the second cell through the first channel. |
| 地址 |
Seoul KR |
