发明名称 SEMICONDUCTOR DEVICE
摘要 Aspects of the invention include a semiconductor device that includes a voltage-controlled type semiconductor element connected to a primary side of an ignition coil for supplying a voltage to an ignition device of an internal combustion engine, a first resistor and a second resistor inserted in series in a supplying path of an input signal for controlling a gate of the voltage-controlled type semiconductor element and a current control circuit including a current limiting circuit for controlling current flowing through the voltage-controlled type semiconductor element. Aspects of the invention also include a first by-pass forming element that is connected in parallel to the second resistor and by-passes the second resistor in a turning ON process of the voltage-controlled type semiconductor element, and a second by-pass forming element that is connected in parallel to the first resistor and the second resistor.
申请公布号 US2016032883(A1) 申请公布日期 2016.02.04
申请号 US201514790072 申请日期 2015.07.02
申请人 FUJI ELECTRIC CO., LTD. 发明人 NAKAMURA Hiroshi;MIYAZAWA Shigemi;MIURA Hideki
分类号 F02P3/055 主分类号 F02P3/055
代理机构 代理人
主权项 1. A semiconductor device comprising: a voltage-controlled type semiconductor element connected to a primary side of an ignition coil for supplying a voltage to an ignition device of an internal combustion engine; a first resistor and a second resistor inserted in series in a supplying path of an input signal for controlling a gate of the voltage-controlled type semiconductor element; a current control circuit for controlling current flowing through the voltage-controlled type semiconductor element; a first by-pass forming element that is connected in parallel to the second resistor and by-passes the second resistor in a turning ON process of the voltage-controlled type semiconductor element; and a second by-pass forming element that is connected in parallel to the first resistor and the second resistor and by-passes the first resistor and the second resistor in a turning OFF process of the voltage-controlled type semiconductor element; wherein the current control circuit includes an active element that is connected to a node between the first resistor and the second resistor and pulls down a gate voltage.
地址 Kawasaki-shi JP