发明名称 |
DETERMINING A RESISTANCE STATE OF A CELL IN A CROSSBAR MEMORY ARRAY |
摘要 |
According to an example, in a method for determining a resistance state of a cell in a crossbar memory array, a first read voltage may be applied across a cell to sense a first cell current. In addition, a second read voltage may be applied across the cell to sense a second cell current. A difference value between the first cell current and the second cell current may be identified and a resistance state of the cell may be determined based on the difference value. |
申请公布号 |
WO2016018404(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
WO2014US49271 |
申请日期 |
2014.07.31 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
MURALIMANOHAR, NAVEEN;ORDENTLICH, ERIK |
分类号 |
G11C7/04;G11C7/10 |
主分类号 |
G11C7/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|