发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device that can conduct plasma processing on a processing target material without occurrence of abnormal discharging, and also provide a plasma processing method for performing composite hardening processing by using the single plasma processing device without changing the pressure in a vacuum chamber under the state that discharging is stable, thereby shortening the processing time and reducing the production cost.SOLUTION: A plasma processing device has a plasma gun 3 which has a cathode 31 connected to the negative electrode side of a discharge power supply 30 and intermediate electrodes 34, 35 connected to the positive electrode side of the discharge power supply 30 and generates plasma to the inside of a chamber 2, a convergence coil 38 for forming a magnetic flux for guiding electrons discharged from the cathode 31, and a reaction gas supply unit 28 for supplying the inside of the chamber 2 with reaction gas for subjecting a processing target material 100 to surface processing. The processing target material 100 is disposed in the chamber 2 while electrically insulated, and plasma is formed in the chamber 2 filled with reaction gas to conduct the surface processing on the processing target material 100.SELECTED DRAWING: Figure 1
申请公布号 JP2016021344(A) 申请公布日期 2016.02.04
申请号 JP20140145084 申请日期 2014.07.15
申请人 CHUGAI RO CO LTD 发明人 FURUYA EIJI;HASHIMOTO NORIAKI;KOSAKA KENJI
分类号 H05H1/48;C23C16/44;C23C16/50;C23C16/52 主分类号 H05H1/48
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