SEMICONDUCTOR DEVICES

摘要

Provided are semiconductor devices. A semiconductor device includes a first well formed in a substrate; an element isolation layer formed on the first well; a second well formed in the first well on a first side of the element isolation layer; a third well formed in the second well, the third well has a higher concentration of impurities than the second well; a first electrode electrically connected to the third well; a fourth well formed in the first well on a second side of the element isolation layer; a fifth well formed in the fourth well, the fifth well has a different conductivity type from the fourth well; a second electrode electrically connected to the fifth well; and a sixth well overlapping the fourth well, the sixth well has a lower concentration of impurities than the fourth well.

主权项

1. A semiconductor device comprising:
a first well formed in a substrate; an element isolation layer that is on the first well; a second well that is in the first well on a first side of the element isolation layer; a third well that is in the second well, wherein the third well has a higher concentration of impurities than the second well; a first electrode that is electrically connected to the third well; a fourth well that is in the first well on a second side of the element isolation layer; a fifth well that is in the fourth well, wherein the fifth well has a different conductivity type from the fourth well; a second electrode that is electrically connected to the fifth well; and a sixth well that overlaps the fourth well, wherein the sixth well has a lower concentration of impurities than the fourth well.