SEMICONDUCTOR DEVICE AND METHOD FOR EVALUATING SEMICONDUCTOR DEVICE

摘要

Provided is a transistor having a low sub-threshold swing value. Also provided is a transistor with a low defect level density of the semiconductor. Also provided is a transistor having excellent electrical characteristics. Also provided is a transistor with stable electrical characteristics. Also provided is a transistor having high frequency characteristics. Also provided is a transistor having minimal current when turned off. Also provided is a semiconductor device having said transistor. This semiconductor device comprises an insulating body, a semiconductor, and a conductive body. The semiconductor has an area in which the semiconductor and the conductive body overlap with one another, with the insulating body interposed therebetween. In this area, there is an area in which of the carrier lifetime due to the microwave photoconductive attenuation of the semiconductor, the component that is rapidly attenuated is from 30nsec to 200nsec. The microwave photoconductive attenuation uses excitation light having a wavelength of less than 337nm.