| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 2; an insulator film 3 formed on the semiconductor substrate 2; a SInSiN film 4 which is formed on the insulator film 3 and includes a temperature detection part 41 and a periphery protective part 42 formed in the periphery of the temperature detection part 41 being separated from the temperature detection part 41, and whose electric resistance changes according to a temperature; and electric wiring 6 connected to the temperature detection part 41.SELECTED DRAWING: Figure 2 |
