发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD FOR SENSING THE SAME |
摘要 |
A nonvolatile memory device includes a first resistive memory cell connected to a first word line, a second resistive memory cell connected to a second word line that is different from the first word line, a clamping unit connected between a sensing node and the first resistive memory cell to provide a clamping bias to the first resistive memory cell, a reference current supplying unit connected to the second resistive memory cell to supply a reference current, and a sense amplifier connected to the sensing node to sense a level change of the sensing node, wherein when the first word line is enabled, the second word line is disabled. |
申请公布号 |
US2016035432(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201514687409 |
申请日期 |
2015.04.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK MU-HUI |
分类号 |
G11C16/28 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile memory device comprising:
a first resistive memory cell connected to a first word line; a second resistive memory cell connected to a second word line that is different from the first word line; a clamping unit connected between a sensing node and the first resistive memory cell and configured to provide a clamping bias to the first resistive memory cell; a reference current supplying unit connected to the second resistive memory cell and configured to supply a reference current; and a sense amplifier connected to the sensing node, the sense amplifier being configured to sense a level change of the sensing node, such that when the first word line is enabled, the second word line is disabled. |
地址 |
SUWON-SI KR |