发明名称 DATA STORING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
摘要 A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes: generating a parity according to first data. The method also includes: when programming the first data into first physical programming unit, programming at least one mark into redundancy bit area of the first physical programming unit. The method further includes: programming the parity into at least one second physical programming unit arranged after the first physical programming unit, and the at least one mark indicates that the parity is programmed into the at least one second physical programming unit.
申请公布号 US2016034343(A1) 申请公布日期 2016.02.04
申请号 US201414492081 申请日期 2014.09.22
申请人 PHISON ELECTRONICS CORP. 发明人 Yeh Chih-Kang
分类号 G06F11/10 主分类号 G06F11/10
代理机构 代理人
主权项 1. A data storing method for a rewritable non-volatile memory module comprising a plurality of physical erasing units, wherein each of the physical erasing units comprising a plurality of physical programming units and each of the physical programming units comprises a data bit area and a redundancy bit area, the data storing method comprising: generating a parity according to first data; programming the first data into a first physical programming unit among the physical programming units; and programming the parity into at least one second physical programming unit among the physical programming units, wherein the at least one second physical programming unit is arranged after the first physical programming unit, wherein the step of programming the first data into the first physical programming unit among the physical programming units comprises: programming at least one mark into the redundancy bit area of the first physical programming unit, wherein the at least one mark indicates that the parity is programmed into the at least one second physical programming unit.
地址 Miaoli TW