| 摘要 |
A thyristor, in particular a phase control thyristor, is disclosed which comprises: a) a semiconductor slab, in particular a semiconductor waver or die, in which a thyristor structure is formed, b) a cathode metallization formed on a cathode region on a cathode side surface of the semiconductor slab, c) a gate metallization formed on a gate region on the cathode side surface of the semiconductor slab, d) a plurality of N discrete emitter shorts, arranged at points P, in the cathode re¬ gion, said points having point locations x,, with i e {1;...; Λ/}, e) the points P, defining a Delaunay triangulation comprising a plurality of trian¬ gles Ty with ye {1;...; M), wherein f ) for a first subset of triangles T/ with / e Si _≡ {1;...; M), g) with each triangle T/ being characterized by a geometric quantity having values qjj with / e Si _≡ {1;...; M), said geometric quantity having a mean value μ, and i) a coefficient of variation of the values qjj with / e Si is smaller than 0.1, preferably smaller than 0.05, and/or ii) an absolute value of a skewedness of the geometric quantities qT,/with / e Si is smaller than 5, preferably smaller than 1, and/or iii) a Kurtosis of the geometric quantities q-r,/ with / e Si is smaller than 20, preferably smaller than 10, and/or iv) for a second subset of triangles Tm with m e S2 <= Si, for which the respec¬ tive geometric quantities q-r,m with m e S2 deviate from the mean value by more than a predetermined amount, in particular by more than 30%, (1 ) a quotient of a standard deviation of the quantities qj,m with m e S2 and a mean squared value of the geometric quantity qi,/ with / e Si is less than 1, preferably less than 0.1, and/or (2) a quotient of a number of triangles in the second subset and a number of triangles in the first subset is less than 1.0 x 10"2, preferably less than 0.5 x 10"3. A method for manufacturing such a thyristor is also disclosed. |
