发明名称 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a voltage generation circuit configured to generate a specific voltage; a first terminal configured to output the specific voltage; a second terminal configured to receive a temperature sensitive voltage; an analog/digital conversion circuit configured to convert the specific voltage and the temperature sensitive voltage to digital values; a storage unit configured to store the specific voltage and the temperature sensitive voltage; and a third terminal configured to transmit the specific voltage and the temperature sensitive voltage to an external semiconductor device.
申请公布号 US2016035713(A1) 申请公布日期 2016.02.04
申请号 US201514807954 申请日期 2015.07.24
申请人 LAPIS SEMICONDUCTOR CO., LTD. 发明人 IWAMOTO Kazushige
分类号 H01L27/02;H01L29/06;H01L29/36;H01L23/60 主分类号 H01L27/02
代理机构 代理人
主权项 1. A semiconductor element, comprising: a substrate; a plurality of first regions formed in the substrate; and a second region formed in the substrate, wherein each of said first regions is formed in a regular hexagonal shape or an elongated hexagonal shape elongated in a specific direction, each of said first regions contains a first impurity with a first conductive type, said second region is formed in a plurality of frame shapes surrounding each of the first regions with an equal distance in between, said frame shapes are arranged adjacent each other along sides thereof, and said second region contains a second impurity with a second conductive type different from the first conductive type.
地址 Kanagawa JP