FIXED VOLTAGE SENSING IN A MEMORY DEVICE

摘要

Methods for sensing ferroelectric memory devices and apparatuses using the same have been disclosed. One such apparatus includes a ferroelectric memory cell coupled to a data line, a reference capacitance, and a common node coupled between the data line and the reference capacitance. A current mirror circuit is coupled to the data line and the reference capacitance. During a sense operation, the common node is configured to be at a fixed voltage and the current mirror circuit is configured to mirror displacement current from the reference capacitance to the ferroelectric memory cell.

主权项

1. An apparatus comprising:
a ferroelectric memory cell coupled to a data line; a reference capacitance; a common node coupled between the data line and the reference capacitance; and a current mirror circuit coupled to the data line and to the reference capacitance, wherein the common node is configured to be at a fixed voltage for sensing the memory cell and the current mirror circuit is configured to mirror displacement current from the reference capacitance to the ferroelectric memory cell.