| 摘要 |
A tunneling transistor structure, comprising a substrate, a silicon strip, a drain region, a source region, a gate dielectric layer and a gate. The silicon strip is formed on the substrate; the drain region is formed at one side of the silicon strip; the source region is provided with a first groove in which the silicon strip is partially contained; the grate dielectric layer is formed on the source region and partially covers the source region; the gate is provided with a second groove in which the gate dielectric layer is partially contained; the cross-sectional shape of the second groove is the same as that of the first groove; during tunneling, the first groove tunnels under the effect of the second groove to form a tunneling current. The present invention also provides a manufacturing method for the tunneling transistor structure. According to the tunneling transistor structure provided in the present invention, the structures of the source region and the gate are changed; during tunneling, the tunneling area of the source region is increased under the effect of the gate, and point tunneling and line tunneling occur in the first groove. Therefore, both the tunneling area and the tunneling probability are increased by means of the structure, and as a result, the on-state current of the whole device is raised. |
