| 发明名称 |
MAGNETIC RAM ARRAY ARCHITECTURE |
| 摘要 |
A magnetic random access memory (MRAM) array including: a plurality of MRAM cells arranged in an array configuration, each comprising a first type nTron and a magnetic memory element; a wordline select circuit comprising of a second type nTron to drive a plurality of parallel wordlines; and a plurality of bitline select circuits, each comprising of said second type nTron for writing to and reading from a column of memory cells in the array and each capable of selecting a single MRAM cell for a memory read or write operation, wherein the second nTron has a higher current drive than the first nTron. |
| 申请公布号 |
US2016035404(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514812812 |
申请日期 |
2015.07.29 |
| 申请人 |
RAYTHEON BBN TECHNOLOGIES CORP. ;HYPRES, Inc. |
发明人 |
Ohki Thomas;Mukhanov Oleg |
| 分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic random access memory (MRAM) array comprising:
a plurality of MRAM cells arranged in an array configuration, each comprising a first type nTron and a magnetic memory element; a wordline select circuit comprising of a second type nTron to drive a plurality of parallel wordlines comprising of a memory word; and a plurality of bitline select circuits, each comprising of said second type nTron for writing to and reading from a column of memory cells in the MRAM array and each capable of selecting a single MRAM cell for a memory read or write operation, wherein the second nTron has a higher current drive than the first nTron. |
| 地址 |
Cambridge MA US |
