| 摘要 |
Provided are an LED chip and a manufacturing method therefor. The method comprises: a substrate (11); an epitaxial layer (12) located on the substrate (11); a transparent electrode layer (13) located on the epitaxial layer (12); at least two grooves (A) penetrating through the transparent electrode layer (13) along a longitudinal direction, with the bottom thereof being located in the epitaxial layer (12), and arranged along the edge of the transparent electrode layer (13); an insulating layer (14), lining the side walls of the grooves and located on the transparent electrode layer (13) at the edge of a notch; an N-type electrode (15) located on the insulating layer (14); and a P-type electrode (16) located on the transparent electrode layer (13), wherein distances from the P-type electrode (16) to various N-type electrodes (15) are all equal. By means of the present invention, by setting N-type electrodes of an LED chip to surround a P-type electrode at equal distances, when the LED chip operates, flow directions of the current between the N-type electrodes and the P-type electrode are relatively dispersive, which can make the current intensity distribution relatively uniform, thereby improving light-emitting efficiency of the LED chip. |
