OPTOELECTRONIC INFRARED SENSOR

摘要

Disclosed is an optoelectronic infrared sensor comprising two semiconductor layers, a p-doped silicon layer (1) and an organic semiconductor layer (2) on the silicon layer (1), each layer being connected to one electrode (3, 4) and the two layers forming a heterojunction. In order to achieve advantageous design conditions, the organic semiconductor layer (2) is provided on a nanostructured and/or microstructured surface layer (6) of the silicon layer (1) and covers the entire area of said surface layer.