发明名称 SEMICONDUCTOR DEVICE HAVING AN AIRGAP DEFINED AT LEAST PARTIALLY BY A PROTECTIVE STRUCTURE
摘要 An apparatus includes a first interconnect and a first barrier structure. The first barrier structure is in contact with a dielectric material. The apparatus further includes a first protective structure in contact with the first barrier structure and an etch stop layer. An airgap is defined at least in part by the first protective structure and the etch stop layer.
申请公布号 WO2016018597(A1) 申请公布日期 2016.02.04
申请号 WO2015US40120 申请日期 2015.07.13
申请人 QUALCOMM INCORPORATED 发明人 ZHU, JOHN JIANHONG;XU, JEFFREY JUNHAO;YEAP, CHOH FEI;SONG, STANLEY SEUNGCHUL;RIM, KERN
分类号 H01L21/768 主分类号 H01L21/768
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