| 发明名称 |
SEMICONDUCTOR DEVICE AND FORMATION THEREOF |
| 摘要 |
A semiconductor device and method of formation are provided. The semiconductor device includes a first active region adjacent a channel, the channel, and a second active region adjacent the channel. The channel has a channel doping profile. The channel includes a central channel portion having a first dopant concentration of a first dopant and a radial channel portion surrounding the central channel portion. The radial channel portion has a second dopant concentration of a second dopant greater than the first dopant concentration. The channel comprising the central channel portion and the radial channel portion has increased voltage threshold tuning as compared to a channel that lacks a central channel portion and a radial channel portion. |
| 申请公布号 |
US2016035886(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201414445157 |
申请日期 |
2014.07.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chen Yen-Ting;Wong I-Hsieh;Liu Chee-Wee |
| 分类号 |
H01L29/78;H01L29/06;H01L29/423;H01L21/324;H01L29/167;H01L29/10;H01L21/02;H01L29/66;H01L29/36 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first active region; a channel adjacent the first active region, the channel having a channel doping profile and comprising:
a central channel portion having a first dopant concentration of a first dopant; anda radial channel portion surrounding the central channel portion, the radial channel portion having a second dopant concentration of a second dopant greater than the first dopant concentration; and a second active region adjacent the channel. |
| 地址 |
Hsin-Chu TW |
