SEMICONDUCTOR DEVICE

摘要

In general, according to one embodiment, a semiconductor device includes, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a fifth semiconductor region, and a gate electrode. The third semiconductor region includes a first portion and a second portion. The first portion is provided between the second semiconductor regions adjacent to each other. An amount of impurity of the second conductivity type in the first portion is greater than an amount of impurity of the first conductivity type in the second semiconductor region contiguous to the first portion. The second portion is arranged with a part of the first semiconductor region. An amount of impurity of the second conductivity type in the second portion is smaller than an amount of impurity of the first conductivity type in the part of the first semiconductor region.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a plurality of second semiconductor regions of the first conductivity type selectively provided on the first semiconductor region, an impurity concentration of the first conductivity type in the second semiconductor region being higher than an impurity concentration of the first conductivity type in the first semiconductor region, the second semiconductor region extending in a first direction, and the plurality of second semiconductor regions provided separated from each other in a second direction orthogonal to the first direction; a plurality of third semiconductor regions of a second conductivity type extending in the first direction, the third semiconductor region including a first portion and a second portion,
the first portion provided between the second semiconductor regions adjacent to each other and an amount of impurity of the second conductivity type in the first portion being greater than an amount of impurity of the first conductivity type in the second semiconductor region contiguous to the first portion,the second portion arranged with a part of the first semiconductor region in the second direction, an amount of impurity of the second conductivity type in the second portion being smaller than an amount of impurity of the first conductivity type in the part of the first semiconductor region; a fourth semiconductor region of the second conductivity type provided on the third semiconductor region; a fifth semiconductor region of the first conductivity type provided on the fourth semiconductor region; and a gate electrode provided on the fourth semiconductor region via a gate insulating film.