FINFET HAVING HIGHLY DOPED SOURCE AND DRAIN REGIONS

摘要

A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin structures from the in-situ doped semiconductor material. A sacrificial channel portion of the fin structures may be removed, wherein a source region and a drain region portion of the fin structures of the in-situ doped semiconductor material remain. The sacrificial channel portion of the fin structure may then be replaced with a functional channel region.

主权项

1. A semiconductor device comprising:
a fin structure comprising a function channel region, a source region portion and a drain region portion, wherein the source and drain region portions of the fin structure are composed of a first epitaxial semiconductor material that is in-situ doped, and the functional channel region of the fin structure is composed of a second epitaxial semiconductor material; a gate structure present on the functional channel region of the fin structure; and a composite spacer including a fin spacer providing the base of the composite spacer and a gate sidewall spacer overlying the fin spacer.