| 发明名称 |
UNIAXIALLY-STRAINED FD-SOI FINFET |
| 摘要 |
Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance. |
| 申请公布号 |
US2016035820(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201414447678 |
申请日期 |
2014.07.31 |
| 申请人 |
STMicroelectronics, Inc. ;Commissariat a l'Energie Atomique et aux Energies Alternatives ;GLOBALFOUNDRIES Inc. |
发明人 |
Morin Pierre;Vinet Maud;Grenouillet Laurent;Jacob Ajey Poovannummoottil |
| 分类号 |
H01L29/06;H01L29/78;H01L29/66 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor comprising:
an insulating layer formed on a substrate; a plurality of nanoscale, uniaxially-strained semiconductor bars arranged in a horizontal array on the insulating layer, the bars spaced apart from one another by a spacing that is less than 30 nm; and a single and contiguous gate extending over the horizontal array. |
| 地址 |
Coppell TX US |
