ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME

摘要

An organic light emitting device includes a switching transistor and a driving transistor. A semiconductor layer is commonly used by the switching and driving transistors. The portion of semiconductor layer corresponding to the driving transistor is curved. A gate insulating layer is located between a channel region and gate electrode of the switching transistor, and between the channel region and the gate electrode of the driving transistor. The gate insulating layer has substantially a same plane shape as the switching gate electrode and the driving gate electrode. An edge of the gate insulating layer and an edge of the switching and driving gate electrodes at least partially overlap.

主权项

1. An organic light emitting device, comprising:
a substrate; a scan line and a previous scan line on the substrate to respectively transmit a scan signal and a previous scan signal; a data line and a driving voltage line insulated from and intersecting the scan line and the previous scan line, the data line and the driving voltage line to respectively transmit a data signal and a driving voltage; a switching transistor connected to the scan line and the data line, the switching transistor including a switching semiconductor layer, a switching channel region, and a switching gate electrode; a driving transistor connected to the switching transistor and including a driving semiconductor layer, a driving channel region, and a driving gate electrode, the driving semiconductor layer and the switching semiconductor layer formed of a same layer; a first gate insulating layer; and an organic light emitting diode connected to the driving transistor, wherein the driving semiconductor layer is curved, wherein the first gate insulating layer is between the switching channel region and the switching gate electrode and between the driving channel region and the driving gate electrode, wherein the first gate insulating layer has substantially a same plane shape as the switching gate electrode and the driving gate electrode, and wherein an edge of the first gate insulating layer and an edge of the switching gate electrode and the driving gate electrode at least partially overlap.