| 发明名称 |
NON-VOLATILE MEMORY DEVICE |
| 摘要 |
According to an embodiment, a non-volatile memory device includes first electrodes arranged in a first direction, a second electrode disposed on a side of the first electrodes in the first direction, a semiconductor layer extending in the first direction through the first electrodes and the second electrode, and a memory film provided between the semiconductor layer and each of the first electrodes. The semiconductor layer includes crystal grains and has a first portion and a second portion, the first portion being adjacent to the first electrodes, and the second portion being adjacent to at least a part of the second electrode, wherein the first portion includes a larger crystal grain than a crystal grain in the second portion. |
| 申请公布号 |
US2016035741(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514619581 |
申请日期 |
2015.02.11 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAJIMA Hikari;KONDO Masaki;NAKAI Tsukasa;IZUMIDA Takashi;TOKUHIRA Hiroki |
| 分类号 |
H01L27/115;H01L29/10;H01L29/04;H01L29/51;H01L23/528 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device, comprising:
first electrodes arranged in a first direction; a second electrode disposed on a side of the first electrodes in the first direction; a semiconductor layer extending in the first direction through the first electrodes and the second electrode, the semiconductor layer including crystal grains and having a first portion and a second portion, the first portion being adjacent to the first electrodes, and the second portion being adjacent to at least a part of the second electrode, wherein the first portion includes a larger crystal grain than a crystal grain in the second portion; and a memory film provided between the semiconductor layer and each of the first electrodes. |
| 地址 |
Tokyo JP |
