| 摘要 |
The simulation device calculates by simulation the number of electrons detected originating from a sample irradiated with charged particles, and generates a simulation image of the sample. The simulation device retains penetration length information (272), which associates the entrance conditions of charged particles with the penetration length, sample constitution information (271), which indicates the constitution of the sample, and released electron number information, which associates the entrance conditions of the charged particles with the number of electrons released. Based on the entrance conditions at a predetermined entry point, the penetration length information (272), the sample constitution information (271), and the released electron number information, the simulation device calculates the number of electrons released from the predetermined entry point. |
