| 摘要 |
PROBLEM TO BE SOLVED: To grow an MSE epitaxial film made to have an N concentration lower than 1E+16 (atoms/cc) by using a polycrystalline SiC substrate as a raw material.SOLUTION: In the invention, there is used as a material a polycrystalline SiC substrate at or higher than 7E+15 (atoms/cc) and at or lower than 1E + 16 (atoms/cc), which is manufactured to have a stable N concentration. Said polycrystalline SiC is used as a material to set the Si molten liquid layer thickness at 25 to 200 μm, and a growth temperature between 1600 to 1850°C. Under said condition, an MSE epitaxial film is grown to have an N concentration lower than 1E + 16 (atoms/cc).SELECTED DRAWING: Figure 2 |
