发明名称 BONDING BODY, POWER MODULE SUBSTRATE, AND HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE
摘要 A bonding body includes: an aluminum member composed of aluminum; and a metal member composed of any one of copper, nickel, and silver, wherein the aluminum member and the metal member are bonded together. In a bonding interface between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member side in the bonding interface, and the Al—Ti—Si layer being disposed between the Ti layer the aluminum member and containing Si which is solid-solubilized into Al3Ti. The Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.
申请公布号 US2016035660(A1) 申请公布日期 2016.02.04
申请号 US201414775137 申请日期 2014.03.14
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 Terasaki Nobuyuki;Nagatomo Yoshiyuki
分类号 H01L23/498;B32B15/01;H01L23/367 主分类号 H01L23/498
代理机构 代理人
主权项 1. A bonding body comprising: an aluminum member composed of aluminum; and a metal member composed of any one of copper, nickel, and silver, wherein the aluminum member and the metal member are bonded together, and wherein in a bonding portion between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member side; and the Al—Ti—Si layer being disposed between the Ti layer and the aluminum member and containing Si which is solid-solubilized into Al3Ti, and wherein the Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.
地址 Tokyo JP